LN Q-switch-manufacture,factory,supplier from China

LiNbO3 (Lithium Niobate, LN) crystal is a multifunctional material that integrates properties of piezoelectric, ferroelectric, pyroelectric, nonlinear, electro-optical, photoelastic, etc. LiNbO3 has good thermal stability and chemical stability. Among the EO crystals, LN and DKDP are the two primary material that have been practical. DKDP crystals can be easily grown with a high optical homogeneity, which can satisfy the requirement of a large caliber Pockels cell.

LN crystals are nonhygroscopic and have low absorption coefficient and insert loss. In addition, LN crystal can operate stably in a wide temperature range, which makes them the main EO crystal applied in military laser systems.LN electro-optic Q-switches are widely used in Er:YAG, Ho:YAG, Tm:YAG lasers, and are suitable for low-power Q-switched output, especially in laser ranging. LN Pockels cells can be very compact, and the half-wave voltage can be very low. By doping MgO in LiNbO3, the damage threshold of LN Pockels cells can been increased dramatically.

E-O Q-switch based on DKDP (KD*P) crystals are one of the most popular Pockels cells in the market.Deuterated potassium dihydrogen phosphate has good transmission from 390 nm to 1400 nm (0.39 μm – 1.4 μm) and combined with high electro-optical coefficients makes it suitable for Pockels cells.Highly deuterated DKDP (D>99% – WISOPTIC) is necessary to reach effective electro-optical response.

Lithium Niobate (LiNbO3) is widely used  in fiber communication devices as birefringent crystal and used as electro-optic modulator and Q-switch for Nd:YAG, Nd:YLF and Ti:Sapphire lasers. It has good mechanical and physical properties and is ideal for optical polarizing components due to its wide transparency range and low cost. LiNbO3's applications for fiber communication include isolators, circulators, beam displacers, and other polarizing optics. The transverse modulation is mostly employed for LiNbO3 crystal.

LiNbO3 (Lithium Niobate, LN) crystal is a multifunctional material that integrates properties of piezoelectric, ferroelectric, pyroelectric, nonlinear, electro-optical, photoelastic, etc. LiNbO3 has good thermal stability and chemical stability.Among the EO crystals, LN and DKDP are the two primary material that have been practical. DKDP crystals can be easily grown with a high optical homogeneity, which can satisfy the requirement of a large caliber Pockels cell.

Compared with congruent LN (cLN) crysal, the electro-optic coefficient, nonlinear optical coefficient, periodic polarization reversal voltage and applied photorefractive properties of stoichiometric LN (sLN) crystal are greatly improved. With such excellent physical properties and wide application prospects, sLN crystal has rapidly become a competitive optoelectronic material.sLN crystals are expected to be thermodynamically stable up to their melting temperature at 1170°C, while keeping a largerelectrical resistivity than cLN crystals by one order of magnitude at any temperature.

LN Crystal is a multifunctional material that integrates properties of piezoelectric, ferroelectric, pyroelectric, nonlinear, electro-optical, photoelastic, etc. LiNbO3 has good thermal stability and chemical stability.As one of the most thoroughly characterized nonlinear optical materials, LiNbO3 is suitable for a variety of frequency conversion applications. For example, it is widely used as frequency doublers for wavelength >1 μm and optical parametric oscillators (OPOs) pumped at 1064 nm as well as quasi-phase-matched (QPM) devices.

RTP possesses a large electro-optic impact for light propagating along either the x or y direction (electric powered along z). It functions right optical transparency from around 400nm to over 4µm. RTP offers a high resistance to optical damage with energy ~1Gw/cm2 for 1ns pulses at 1064nm. It is largely total lack of piezo-electric resonances at 200kHz and probable beyond. The primary distinction between RTP and BBO whilst used for Q-switching pertains to the common power degree at which the Q-switch is capable of be used practically.

RTP (Rubidium Titanyl Phosphate - RbTiOPO4) is a robust crystal material suitable for a wide range of E-O applications. It has advantages of higher damage threshold (about 1.8 times that of KTP), high resistivity, high repetition rate, no hygroscopic or piezoelectric effect.

The EO Q-switch (Pockels cell) is an electro-optic device in which the crystal produces linear changes in the birefringence of the crystal (in contrast to the Kerr Effect, which is quadratic with E). Pockels cells are essential components in various optical devices such as Q-switches for lasers, free space electro-optical modulators, free space switches.   WISOPTIC use highly deuterated DKDP (KD*P) crystal (D%>99%) to make high quality Q-switches with high laser induced damage threshold.

HGTR (High Grey Track Resistance) KTP crystal developed by hydrothermal method overcomes the common phenomenon of electrochromism of the flux-grown KTP, thus has many advantages such as high electrical resistivity, low insertion loss, low half-wave voltage, high laser damage threshold, and wide transmission band.

The improved hydrothermal-grown KTP crystal overcomes the common electrochromism damage of flux-grown KTP. The hydrothermal-grown KTP (HGTR-KTP, or GTR-KTP) has high damage threshold, large effective electro-optic coefficients and lower half-wave voltage.  KTP EO Q-switches made by HGTR-KTP crystals utilize thermally compensated double crystal designs. They are mainly used in pulse lasers with narrow pulse width and high repetition frequency.

Pure LiNbO3 (LN) is a good candidate for various optical devices, but has a major disadvantage due to its low threshold optical damage. MgO:LN (congruent compositions) is one of the possible solutions to deal with this problem. MgO doping has played an important role in LN and shown an increased threshold laser beam strength by 100 times. An interesting point is that every physical property of MgO:LN (e.g.

LiNbO3 crystal is a low cost photoelectric material with good mechanical and physical properties as well as high optical homogeneity. It has been widely used as frequency doublers for wavelength > 1mm and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices. With preferable E-O coefficients, LiNbO3 crystal has become the most commonly used material for Q-switches and phase modulators, waveguide substrate, and surface acoustic wave (SAW) wafers, etc.

BBO（Beta-Barium Borate, β-BaB2O4）based Pockels cells operate from approximately 0.2 - 1.65 µm and are not subject to tracking degradation. BBO exhibits low piezoelectric response, good thermal stability, and low absorption. Low piezoelectric ringing makes this Pockels cell attractive for the control of high-power and high-pulse repetition rate (hundreds of kilohertz, up to 1MHz) lasers.

KTP Pockels are based on hydrothermal-grown high resistivity KTP crystals overcomes the common electrochromism damage of flux-grown KTP. Hydrothermal-grown KTP crystals have better optical homogeneity and higher damage threshold comparing to RTP crystals. This KTP crystal has large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double crystal designs.

One of the most important drawbacks of popular LiNbO3 crystal is its susceptibility to photorefractive damage (optically induced change of refractive index, usually under exposure with blue or green CW light). The usual way to eliminate this effect is to keep LN crystals at elevated temperatures (400K or more). Another way to prevent photorefractive damage is MgO-doping (usually at levels of around 5 mol% for congruent LN).

Lithium  Niobate (LN) crystal has excellent electro-optic, acousto-optic,  piezoelectric and nonlinear properties. More and more attention has been paid on its application in military technology. LN crystal has large nonlinear optical coefficient and can easily achieve non-critical phase matching. As an E-O material, LN crystal has been used as an important optical waveguide material.

RTP Pockels cell has a number of benefits compared to other electro-optic materials:Non hygroscopicLow switching voltageGood extinction ratioNo piezo and pyro-electric effectsUsed either as RTP Q-switch or RTP pulsepicker WISOPTIC has developed precise alignment techniques that enable us to offer our customers complete, plug-and-play RTP Pockels cell assemblies with a superior level of performance.Crystal Size4x4x10 mm6x6x10 mm8x8x10 mmQuantity of Crystals222Static Half-wave Voltage @ 1064 nmX-cut: 1700 VY-cut: 1400 VX-cut: 2500 VY-cut: 2100 VX-cut: 3300 VY-cut: 2750 VE

BBO features good optical transparency from around 200nm to over 2µm, offers a high resistance to optical damage with power handling >3GW/cm2 for 1ns pulses at 1064nm. It is possible to use BBO Pockels cells at average power levels of hundreds of watts and power densities of several kW/cm2. In addition, BBO Q-switches have very low levels of piezo-electric resonances.

Readily available stock of periodically poled LN (PPLN) crystals can be provided on short lead time, with various specifications of sizes and periods.PPLN SHG crystals are available for pump laser wavelengths 976-2100 nm, generating light 488-1050nm.PPLN OPO crsytals are available for pump sources 515-1064 nm, generating visible and IR CW beams.PPLN DFG crystals are available for various combinations of pump sources, generating wavelengths 2-5.5 um.PPLN SFG crystals are available for various combinations of pump sources, generating wavelengths 500-700 nm.

Cr:YAG (Chromium doped Ytterium Aluminum Garnet, Cr:Y3Al5O12)  crystal is an excellent material for passive Q-switching of Nd:YAG and  other Nd or Yb doped lasers in the wavelength range of 0.8 to 1.2 μm. One of the remarkable features of Cr:YAG is its high damage threshold (500-1000 MW/cm2). Its absorption band extends from 800 nm to 1200 nm and peaks at around 1060nm with a very large absorption cross section.

Basically all Pockels cell drivers are made based on solid-state electronic technology, using high voltage transistors such as MOSFETs. Multiple high voltage transistors may have to be stacked, taking care to achieve an even distribution of voltage across those. Instead of using some heavily isolated floating gate drive circuitry for the different transistors, one may use certain advanced ideas such as implementing so-called avalanche switch stacks involving avalanche diodes and/or avalanche bipolar transistors.Device lifetimes can be very long, provided that properly engineered

Main SpecificationsDimensionsAperture2×2 ~ 14×14 mm2Length0.1 - 12 mmOrientation[100] or [111] (±1°)Doping Concentration0.5 ~ 3.0 mol%Initial Absorption Coefficient0.5 ~ 6.0 cm-1 @ 1064 nmInitial Transmission5% ~ 95% Surface Flatness< λ/8 @ 633 nmEnd Surface Parallelism< 30”Chamfer≤ 0.1 mm × 45°Surface Quality20-10 [s-d] (MIL-PRF-13830B)CoatingAR (R<0.2% @1064nm) or according to customer’s requestLIDT≥ 500 MW/cm2The pulse width of Cr4+:YAG passively Q-switched lasers could be as short as 5 ns for diode pumped Nd:YAG lasers and the repetition could be as high a