BBO Q-switching & Pulse-Picking at High Powers-manufacture,factory,supplier from China

3 The main application of lithium tantalate crystal3.3 E-O Q-SwitchThe basis of laser Q-switched technology is a special optical component - a fast intracavity optical switch generally called Q-switch. The Q value is an indicator for evaluating the quality of the optical resonant cavity. The higher the Q value, the lower the required pump threshold and the easier it is for the laser to oscillate. The purpose of laser Q-switching technology is to compress the pulse width and increase the peak power.

It’s well known that the DKDP crystal is very easy to be damaged by humidity, especially in  environment with high temperature. So ordinary DKDP Pockels cells can not be used in high temperature and high humidity environment, or their service life is very short. After more than two years of continuous technical research, WISOPTIC has successfully developed DKDP Pockels cells that can be used in lasers working in high temperature and high humidity environments.

03 Experimental results and analysisBy optimizing the cavity length parameters of Nd:YVO4 (www.wisoptic.com) laser under high-power pump injection, a 1064 nm high peak power narrow pulse laser output with an average power of 26 W, a repetition frequency of 20 kHz, and a single pulse width of 5 ns was obtained when the 888 nm pump light power was 65 W; after the 1064 nm fundamental frequency infrared light was doubled by the LBO crystal, a 532 nm laser with a maximum power of 16 W was finally obtained, and the infrared to green light conversion efficiency reached 61.5%.

2.2 Theoretical inversion cognition of precursor characteristics through damage morphologyThe typical damage morphology of multilayer dielectric films with picosecond pulse in the fundamental frequency band is high-density and small-scale. In order to understand the destruction process, we designed a multi-layer dielectric film system with high fundamental frequency and high reflection, and used a 1064 nm 30 ps laser to conduct a destruction experiment. Figure 9 shows a typical damage morphology.

03 Experimental results and analysisWhen the green light input power is lower than 4 W, the matching temperature of the BBO crystal has little effect on the output power of the quadrupled 266 nm laser, and when the optimal power of ultraviolet light output is achieved, the temperature offset ΔT of the heating device also tends to be consistent; when the green light input power is greater than 8 W, the higher the matching temperature of the BBO crystal (www.wisoptic.com), the smaller the temperature offset ΔT of the heating device, and the higher the output power of the 266 nm la

04 Theoretical study of thermal properties As can be seen from Figure 5 (a), when the BBO crystal (www.wisoptic.com) matching temperature is 60 ℃, as the 266 nm deep ultraviolet laser power gradually increases from 0.32 W to 1.24 W, 2.09 W and 2.25 W, the fitted nonlinear absorption coefficient βNLA also increases continuously, from 0 to 0.079, 0.128, and 0.189 cm/GW, respectively.

In 1962, the American scientist McClung F J reported for the first time that the silver mirror of the ruby laser resonator had hole burning damage, which was the first public report on the laser damage of optical components. The subsequent invention of Q-switching technology and mode-locking technology increased the peak power of laser pulses by several orders of magnitude. The problem of laser damage runs through and affects the design and operation of lasers, and promotes the development of optical materials and optical component manufacturing technologies.

04 Theoretical study of thermal properties The above experiment shows that the BBO crystal (www.wisoptic.com) generates serious heat in the process of frequency quadrupling. It is known that the energy band gap of the BBO crystal is 6.56 eV, while the single photon energy of 266 nm and 532 nm lasers is 4.66 eV and 2.33 eV respectively. Theoretically, the crystal does not have single photon absorption of 266 nm and 532 nm lasers.

Experimental SetupIn order to obtain a 266 nm deep ultraviolet laser with high efficiency and stable operation, this paper built an all-solid-state 266 nm deep ultraviolet laser generation device as shown in Figure 1, which consists of a cavity-dumped all-solid-state Nd:YVO4 laser, a double-frequency system, and a quadruple-frequency system.Fig.

As the source manufacturer of many kinds of function crystals and the leading producer of DKDP Pockels cell in China, WISOPTIC provides high cost-effective products to its customers worldwide and gains substantial trust from all of its business partners. Every year over 40% of WISOPTIC's products are exported to Europe, UK, North America, Korea, Israel, etc.Normally WISOPTIC takes parts in at least one of the important exhibitions in the industry of photonics and laser, such as Laser World of Photonics (Munich/Shanghai), SPIE Photonics West (San Francisco), KIMES (Seoul), PHOTONIX (To